Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes wit...

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Autores principales: Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, Jinwoo Hwang
Formato: article
Lenguaje:EN
Publicado: American Physical Society 2019
Materias:
Physics
QC1-999
Acceso en línea:https://doaj.org/article/753ff00c08774f66ab627758de659be3
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https://doaj.org/article/753ff00c08774f66ab627758de659be3

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