$Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}$
Código QR

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes wit...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, Jinwoo Hwang
Formato:	article
Lenguaje:	EN
Publicado:	American Physical Society 2019
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/753ff00c08774f66ab627758de659be3
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:753ff00c08774f66ab627758de659be3
record_format	dspace
spelling	oai:doaj.org-article:753ff00c08774f66ab627758de659be32021-12-02T12:02:05ZUnusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}10.1103/PhysRevX.9.0410272160-3308https://doaj.org/article/753ff00c08774f66ab627758de659be32019-11-01T00:00:00Zhttp://doi.org/10.1103/PhysRevX.9.041027http://doi.org/10.1103/PhysRevX.9.041027https://doaj.org/toc/2160-3308Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic-scale structure of β-Ga_{2}O_{3} using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy-interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in β-Ga_{2}O_{3}. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn doping through increased vacancy concentration. These findings provide new insight on this emerging material’s unique response to the incorporation of impurities that can critically influence their properties.Jared M. JohnsonZhen ChenJoel B. VarleyChristine M. JacksonEsmat FarzanaZeng ZhangAaron R. ArehartHsien-Lien HuangArda GencSteven A. RingelChris G. Van de WalleDavid A. MullerJinwoo HwangAmerican Physical SocietyarticlePhysicsQC1-999ENPhysical Review X, Vol 9, Iss 4, p 041027 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Jared M. Johnson Zhen Chen Joel B. Varley Christine M. Jackson Esmat Farzana Zeng Zhang Aaron R. Arehart Hsien-Lien Huang Arda Genc Steven A. Ringel Chris G. Van de Walle David A. Muller Jinwoo Hwang Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}
description	Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic-scale structure of β-Ga_{2}O_{3} using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy-interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in β-Ga_{2}O_{3}. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn doping through increased vacancy concentration. These findings provide new insight on this emerging material’s unique response to the incorporation of impurities that can critically influence their properties.
format	article
author	Jared M. Johnson Zhen Chen Joel B. Varley Christine M. Jackson Esmat Farzana Zeng Zhang Aaron R. Arehart Hsien-Lien Huang Arda Genc Steven A. Ringel Chris G. Van de Walle David A. Muller Jinwoo Hwang
author_facet	Jared M. Johnson Zhen Chen Joel B. Varley Christine M. Jackson Esmat Farzana Zeng Zhang Aaron R. Arehart Hsien-Lien Huang Arda Genc Steven A. Ringel Chris G. Van de Walle David A. Muller Jinwoo Hwang
author_sort	Jared M. Johnson
title	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}
title_short	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}
title_full	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}
title_fullStr	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}
title_full_unstemmed	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}
title_sort	unusual formation of point-defect complexes in the ultrawide-band-gap semiconductor β-ga_{2}o_{3}
publisher	American Physical Society
publishDate	2019
url	https://doaj.org/article/753ff00c08774f66ab627758de659be3
work_keys_str_mv	AT jaredmjohnson unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT zhenchen unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT joelbvarley unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT christinemjackson unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT esmatfarzana unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT zengzhang unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT aaronrarehart unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT hsienlienhuang unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT ardagenc unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT stevenaringel unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT chrisgvandewalle unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT davidamuller unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3 AT jinwoohwang unusualformationofpointdefectcomplexesintheultrawidebandgapsemiconductorbga2o3
_version_	1718394755795124224

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

Ejemplares similares