Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures

Abstract Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are...

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Autores principales:	Wing H. Ng, Yao Lu, Huiyun Liu, Claire J. Carmalt, Ivan P. Parkin, Anthony J. Kenyon
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/75cc2344f32242249b755950fd805ff1
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spelling	oai:doaj.org-article:75cc2344f32242249b755950fd805ff12021-12-02T12:32:47ZControlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures10.1038/s41598-018-21864-22045-2322https://doaj.org/article/75cc2344f32242249b755950fd805ff12018-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-21864-2https://doaj.org/toc/2045-2322Abstract Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.Wing H. NgYao LuHuiyun LiuClaire J. CarmaltIvan P. ParkinAnthony J. KenyonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Wing H. Ng Yao Lu Huiyun Liu Claire J. Carmalt Ivan P. Parkin Anthony J. Kenyon Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
description	Abstract Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.
format	article
author	Wing H. Ng Yao Lu Huiyun Liu Claire J. Carmalt Ivan P. Parkin Anthony J. Kenyon
author_facet	Wing H. Ng Yao Lu Huiyun Liu Claire J. Carmalt Ivan P. Parkin Anthony J. Kenyon
author_sort	Wing H. Ng
title	Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
title_short	Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
title_full	Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
title_fullStr	Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
title_full_unstemmed	Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
title_sort	controlling and modelling the wetting properties of iii-v semiconductor surfaces using re-entrant nanostructures
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/75cc2344f32242249b755950fd805ff1
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_version_	1718393987430088704

Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures

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