Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures
Abstract Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are...
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Autores principales: | Wing H. Ng, Yao Lu, Huiyun Liu, Claire J. Carmalt, Ivan P. Parkin, Anthony J. Kenyon |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
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Materias: | |
Acceso en línea: | https://doaj.org/article/75cc2344f32242249b755950fd805ff1 |
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