Hot electrons in a nanowire hard X-ray detector
Designing efficient nanowire chip-based electrical and optical devices remains a challenge. Here, the authors present an axial p-n junction GaAs nanowire X-ray detector that enables achieving a spatial resolution of 200 nm; probing the internal electrical field and observing hot electron effects at...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/76e0867c35524acb9df7216ffe5817c9 |
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| Sumario: | Designing efficient nanowire chip-based electrical and optical devices remains a challenge. Here, the authors present an axial p-n junction GaAs nanowire X-ray detector that enables achieving a spatial resolution of 200 nm; probing the internal electrical field and observing hot electron effects at the nanoscale. |
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