Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confin...

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Detalles Bibliográficos
Autores principales: Kihoon Park, Ahmed Mohamed, Mitra Dutta, Michael A. Stroscio, Can Bayram
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Average Group Velocity
Electron-phonon Scattering Rate
Interface Phonon Modes
Electron-phonon Scat Tering
Phonon Frequency Range
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f
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https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f

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