Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confin...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f |
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| Sumario: | Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confined mode optical phonon dispersion relation, electron–phonon scattering rates, and average group velocity of emitted optical phonons are developed and numerically calculated. The dispersion relation of the interface phonons shows a convergence to the resonant phonon frequencies 577.8 and 832.3 cm−1 with a steep slope around the zone center indicating a large group velocity. At the onset of interface phonon emission, the average group velocity is small due to the large contribution of interface and confined mode phonons with close-to-zero group velocity, but eventually increases up to larger values than the bulk GaN acoustic phonon velocity along the wurtzite crystal c-axis (8 nm/ps). By adjusting the GaN thickness in the double heterostructure, the average group velocity can be engineered to become larger than the velocity of acoustic phonons at a specific electron energy. This suggests that the high group velocity interface mode optical phonons can be exploited to remove heat more effectively and reduce junction temperatures in GaN-based heterostructures. |
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