Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confin...

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Autores principales:	Kihoon Park, Ahmed Mohamed, Mitra Dutta, Michael A. Stroscio, Can Bayram
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Average Group Velocity Electron-phonon Scattering Rate Interface Phonon Modes Electron-phonon Scat Tering Phonon Frequency Range Medicine R Science Q
Acceso en línea:	https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f
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spelling	oai:doaj.org-article:76fd53ebcea64b21badb45c5447b970f2021-12-02T15:05:41ZElectron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure10.1038/s41598-018-34441-42045-2322https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f2018-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-34441-4https://doaj.org/toc/2045-2322Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confined mode optical phonon dispersion relation, electron–phonon scattering rates, and average group velocity of emitted optical phonons are developed and numerically calculated. The dispersion relation of the interface phonons shows a convergence to the resonant phonon frequencies 577.8 and 832.3 cm−1 with a steep slope around the zone center indicating a large group velocity. At the onset of interface phonon emission, the average group velocity is small due to the large contribution of interface and confined mode phonons with close-to-zero group velocity, but eventually increases up to larger values than the bulk GaN acoustic phonon velocity along the wurtzite crystal c-axis (8 nm/ps). By adjusting the GaN thickness in the double heterostructure, the average group velocity can be engineered to become larger than the velocity of acoustic phonons at a specific electron energy. This suggests that the high group velocity interface mode optical phonons can be exploited to remove heat more effectively and reduce junction temperatures in GaN-based heterostructures.Kihoon ParkAhmed MohamedMitra DuttaMichael A. StroscioCan BayramNature PortfolioarticleAverage Group VelocityElectron-phonon Scattering RateInterface Phonon ModesElectron-phonon Scat TeringPhonon Frequency RangeMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Average Group Velocity Electron-phonon Scattering Rate Interface Phonon Modes Electron-phonon Scat Tering Phonon Frequency Range Medicine R Science Q
spellingShingle	Average Group Velocity Electron-phonon Scattering Rate Interface Phonon Modes Electron-phonon Scat Tering Phonon Frequency Range Medicine R Science Q Kihoon Park Ahmed Mohamed Mitra Dutta Michael A. Stroscio Can Bayram Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
description	Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confined mode optical phonon dispersion relation, electron–phonon scattering rates, and average group velocity of emitted optical phonons are developed and numerically calculated. The dispersion relation of the interface phonons shows a convergence to the resonant phonon frequencies 577.8 and 832.3 cm−1 with a steep slope around the zone center indicating a large group velocity. At the onset of interface phonon emission, the average group velocity is small due to the large contribution of interface and confined mode phonons with close-to-zero group velocity, but eventually increases up to larger values than the bulk GaN acoustic phonon velocity along the wurtzite crystal c-axis (8 nm/ps). By adjusting the GaN thickness in the double heterostructure, the average group velocity can be engineered to become larger than the velocity of acoustic phonons at a specific electron energy. This suggests that the high group velocity interface mode optical phonons can be exploited to remove heat more effectively and reduce junction temperatures in GaN-based heterostructures.
format	article
author	Kihoon Park Ahmed Mohamed Mitra Dutta Michael A. Stroscio Can Bayram
author_facet	Kihoon Park Ahmed Mohamed Mitra Dutta Michael A. Stroscio Can Bayram
author_sort	Kihoon Park
title	Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
title_short	Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
title_full	Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
title_fullStr	Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
title_full_unstemmed	Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
title_sort	electron scattering via interface optical phonons with high group velocity in wurtzite gan-based quantum well heterostructure
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f
work_keys_str_mv	AT kihoonpark electronscatteringviainterfaceopticalphononswithhighgroupvelocityinwurtziteganbasedquantumwellheterostructure AT ahmedmohamed electronscatteringviainterfaceopticalphononswithhighgroupvelocityinwurtziteganbasedquantumwellheterostructure AT mitradutta electronscatteringviainterfaceopticalphononswithhighgroupvelocityinwurtziteganbasedquantumwellheterostructure AT michaelastroscio electronscatteringviainterfaceopticalphononswithhighgroupvelocityinwurtziteganbasedquantumwellheterostructure AT canbayram electronscatteringviainterfaceopticalphononswithhighgroupvelocityinwurtziteganbasedquantumwellheterostructure
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Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

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