Nano- and microscratching as a potential method for texturing the Si surface

The possibility of Si texturing through the use of nano- and microscratching with subsequent chemical etching has been investigated. The influence of the scratching speed, orientation of the indenter (face-on, edge-on) and normal load on the mechanism of deformation during scratching has been analyz...

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Autores principales: Prisăcaru, Andrian, Şikimaka, Olga, Harea, Evghenii, Burlacu, Alexandru, Enachi, Mihail, Branişte, Fiodor
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Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2014
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Acceso en línea:https://doaj.org/article/777fca9c3662401a8716c0f834a44d87
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spelling oai:doaj.org-article:777fca9c3662401a8716c0f834a44d872021-11-21T11:58:57ZNano- and microscratching as a potential method for texturing the Si surface539.2+544.6+621.3832537-63651810-648Xhttps://doaj.org/article/777fca9c3662401a8716c0f834a44d872014-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2014/article/39446https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The possibility of Si texturing through the use of nano- and microscratching with subsequent chemical etching has been investigated. The influence of the scratching speed, orientation of the indenter (face-on, edge-on) and normal load on the mechanism of deformation during scratching has been analyzed to reveal the favorable loading conditions to obtain plastic scratches. It has been found that the surface of scratches has a corrugated structure that was assumed to be the result of the stick-slip behavior during scratching. Different etching patterns displayed after chemical etching, such as inverse pyramids and a lamellar structure, have been attributed to the specific initial relief of the scratches and etching conditions.Prisăcaru, AndrianŞikimaka, OlgaHarea, EvgheniiBurlacu, AlexandruEnachi, MihailBranişte, FiodorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 13, Iss 3-4, Pp 188-194 (2014)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Prisăcaru, Andrian
Şikimaka, Olga
Harea, Evghenii
Burlacu, Alexandru
Enachi, Mihail
Branişte, Fiodor
Nano- and microscratching as a potential method for texturing the Si surface
description The possibility of Si texturing through the use of nano- and microscratching with subsequent chemical etching has been investigated. The influence of the scratching speed, orientation of the indenter (face-on, edge-on) and normal load on the mechanism of deformation during scratching has been analyzed to reveal the favorable loading conditions to obtain plastic scratches. It has been found that the surface of scratches has a corrugated structure that was assumed to be the result of the stick-slip behavior during scratching. Different etching patterns displayed after chemical etching, such as inverse pyramids and a lamellar structure, have been attributed to the specific initial relief of the scratches and etching conditions.
format article
author Prisăcaru, Andrian
Şikimaka, Olga
Harea, Evghenii
Burlacu, Alexandru
Enachi, Mihail
Branişte, Fiodor
author_facet Prisăcaru, Andrian
Şikimaka, Olga
Harea, Evghenii
Burlacu, Alexandru
Enachi, Mihail
Branişte, Fiodor
author_sort Prisăcaru, Andrian
title Nano- and microscratching as a potential method for texturing the Si surface
title_short Nano- and microscratching as a potential method for texturing the Si surface
title_full Nano- and microscratching as a potential method for texturing the Si surface
title_fullStr Nano- and microscratching as a potential method for texturing the Si surface
title_full_unstemmed Nano- and microscratching as a potential method for texturing the Si surface
title_sort nano- and microscratching as a potential method for texturing the si surface
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2014
url https://doaj.org/article/777fca9c3662401a8716c0f834a44d87
work_keys_str_mv AT prisacaruandrian nanoandmicroscratchingasapotentialmethodfortexturingthesisurface
AT sikimakaolga nanoandmicroscratchingasapotentialmethodfortexturingthesisurface
AT hareaevghenii nanoandmicroscratchingasapotentialmethodfortexturingthesisurface
AT burlacualexandru nanoandmicroscratchingasapotentialmethodfortexturingthesisurface
AT enachimihail nanoandmicroscratchingasapotentialmethodfortexturingthesisurface
AT branistefiodor nanoandmicroscratchingasapotentialmethodfortexturingthesisurface
_version_ 1718419313166123008