Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. For conventional SOT-metal bilayer systems, heavy metals...
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/77d082f899684347a5aeb6073d928745 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|