Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi

To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. For conventional SOT-metal bilayer systems, heavy metals...

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Autores principales:	Miao Jiang, Eisuke Matsushita, Yota Takamura, Le Duc Anh, Shigeki Nakagawa, Shinobu Ohya, Masaaki Tanaka
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/77d082f899684347a5aeb6073d928745
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spelling	oai:doaj.org-article:77d082f899684347a5aeb6073d9287452021-12-01T18:52:06ZSpin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi2158-322610.1063/5.0062666https://doaj.org/article/77d082f899684347a5aeb6073d9287452021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0062666https://doaj.org/toc/2158-3226To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. For conventional SOT-metal bilayer systems, heavy metals (HMs) with a large spin Hall angle (θSH) are generally used for generating a spin current, which is injected into the adjacent ferromagnet (FM) layer and exerts a torque on the magnetization to switch it. However, the large resistivity of generally used HMs such as β-Ta and β-W can increase the Ohmic loss. In this article, we achieve full SOT switching in Heusler alloy Co2FeSi using low-resistivity Pd as a spin current generation source. The critical switching current density is found to be 3.7 × 107 A cm−2, which is in the same order of magnitude as that required for conventional HM/FM systems even though Pd has a smaller θSH than that of generally used HMs. Using harmonic Hall measurements, the damping-like and field-like effective fields per unit current density are estimated to be 56.9 (10−7 Oe A−1 cm2) and 39.8 (10−7 Oe A−1 cm2), respectively. This high efficiency can be attributed to the excellent lattice matching between Co2FeSi and Pd (only 2% mismatch), to a slight Pd diffusion, and possibly to the additional SOTs induced by the in-plane spin component generated in the Co2FeSi layer. Our finding will advance the development of SOT-MRAM devices with both better reading and writing performance.Miao JiangEisuke MatsushitaYota TakamuraLe Duc AnhShigeki NakagawaShinobu OhyaMasaaki TanakaAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115014-115014-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Miao Jiang Eisuke Matsushita Yota Takamura Le Duc Anh Shigeki Nakagawa Shinobu Ohya Masaaki Tanaka Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
description	To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. For conventional SOT-metal bilayer systems, heavy metals (HMs) with a large spin Hall angle (θSH) are generally used for generating a spin current, which is injected into the adjacent ferromagnet (FM) layer and exerts a torque on the magnetization to switch it. However, the large resistivity of generally used HMs such as β-Ta and β-W can increase the Ohmic loss. In this article, we achieve full SOT switching in Heusler alloy Co2FeSi using low-resistivity Pd as a spin current generation source. The critical switching current density is found to be 3.7 × 107 A cm−2, which is in the same order of magnitude as that required for conventional HM/FM systems even though Pd has a smaller θSH than that of generally used HMs. Using harmonic Hall measurements, the damping-like and field-like effective fields per unit current density are estimated to be 56.9 (10−7 Oe A−1 cm2) and 39.8 (10−7 Oe A−1 cm2), respectively. This high efficiency can be attributed to the excellent lattice matching between Co2FeSi and Pd (only 2% mismatch), to a slight Pd diffusion, and possibly to the additional SOTs induced by the in-plane spin component generated in the Co2FeSi layer. Our finding will advance the development of SOT-MRAM devices with both better reading and writing performance.
format	article
author	Miao Jiang Eisuke Matsushita Yota Takamura Le Duc Anh Shigeki Nakagawa Shinobu Ohya Masaaki Tanaka
author_facet	Miao Jiang Eisuke Matsushita Yota Takamura Le Duc Anh Shigeki Nakagawa Shinobu Ohya Masaaki Tanaka
author_sort	Miao Jiang
title	Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
title_short	Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
title_full	Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
title_fullStr	Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
title_full_unstemmed	Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi
title_sort	spin–orbit torque magnetization switching in a perpendicularly magnetized full heusler alloy co2fesi
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/77d082f899684347a5aeb6073d928745
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Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi

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