Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi

Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi

To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization switching in perpendicularly magnetized full Heusler alloys is vitally important. For conventional SOT-metal bilayer systems, heavy metals...

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Detalles Bibliográficos
Autores principales: Miao Jiang, Eisuke Matsushita, Yota Takamura, Le Duc Anh, Shigeki Nakagawa, Shinobu Ohya, Masaaki Tanaka
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
Materias:
Physics
QC1-999
Acceso en línea:https://doaj.org/article/77d082f899684347a5aeb6073d928745
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