Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Abstract Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN ba...

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Autores principales: Seung-Hye Baek, Gun-Woo Lee, Chu-Young Cho, Sung-Nam Lee
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/780a418e1f8c4a059ec1398e8e7efe68
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