Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Abstract Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN ba...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Seung-Hye Baek, Gun-Woo Lee, Chu-Young Cho, Sung-Nam Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/780a418e1f8c4a059ec1398e8e7efe68
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:780a418e1f8c4a059ec1398e8e7efe68
record_format	dspace
spelling	oai:doaj.org-article:780a418e1f8c4a059ec1398e8e7efe682021-12-02T18:17:54ZGate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor10.1038/s41598-021-86575-72045-2322https://doaj.org/article/780a418e1f8c4a059ec1398e8e7efe682021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86575-7https://doaj.org/toc/2045-2322Abstract Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source–drain dark current increases as the gate bias increases from − 1.0 to + 1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.Seung-Hye BaekGun-Woo LeeChu-Young ChoSung-Nam LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Seung-Hye Baek Gun-Woo Lee Chu-Young Cho Sung-Nam Lee Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
description	Abstract Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source–drain dark current increases as the gate bias increases from − 1.0 to + 1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.
format	article
author	Seung-Hye Baek Gun-Woo Lee Chu-Young Cho Sung-Nam Lee
author_facet	Seung-Hye Baek Gun-Woo Lee Chu-Young Cho Sung-Nam Lee
author_sort	Seung-Hye Baek
title	Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
title_short	Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
title_full	Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
title_fullStr	Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
title_full_unstemmed	Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
title_sort	gate-controlled amplifiable ultraviolet algan/gan high-electron-mobility phototransistor
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/780a418e1f8c4a059ec1398e8e7efe68
work_keys_str_mv	AT seunghyebaek gatecontrolledamplifiableultravioletalganganhighelectronmobilityphototransistor AT gunwoolee gatecontrolledamplifiableultravioletalganganhighelectronmobilityphototransistor AT chuyoungcho gatecontrolledamplifiableultravioletalganganhighelectronmobilityphototransistor AT sungnamlee gatecontrolledamplifiableultravioletalganganhighelectronmobilityphototransistor
_version_	1718378283740954624

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Ejemplares similares