Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Abstract Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN ba...
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| Main Authors: | , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/780a418e1f8c4a059ec1398e8e7efe68 |
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