Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

Anti-ferromagnetic based memories have a wide range of advantages over their ferromagnetic counterparts, however, their electrical signatures of switching are complicated by spurious signals. Here, Arpaci et al demonstrate an experimental method to distinguish between anti-ferromagnetic switching, a...

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Autores principales: Sevdenur Arpaci, Victor Lopez-Dominguez, Jiacheng Shi, Luis Sánchez-Tejerina, Francesca Garesci, Chulin Wang, Xueting Yan, Vinod K. Sangwan, Matthew A. Grayson, Mark C. Hersam, Giovanni Finocchio, Pedram Khalili Amiri
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/7962adb64f1b4c0aacee238c2f42e02a
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