Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

Anti-ferromagnetic based memories have a wide range of advantages over their ferromagnetic counterparts, however, their electrical signatures of switching are complicated by spurious signals. Here, Arpaci et al demonstrate an experimental method to distinguish between anti-ferromagnetic switching, a...

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Autores principales:	Sevdenur Arpaci, Victor Lopez-Dominguez, Jiacheng Shi, Luis Sánchez-Tejerina, Francesca Garesci, Chulin Wang, Xueting Yan, Vinod K. Sangwan, Matthew A. Grayson, Mark C. Hersam, Giovanni Finocchio, Pedram Khalili Amiri
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/7962adb64f1b4c0aacee238c2f42e02a
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spelling	oai:doaj.org-article:7962adb64f1b4c0aacee238c2f42e02a2021-12-02T16:06:03ZObservation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements10.1038/s41467-021-24237-y2041-1723https://doaj.org/article/7962adb64f1b4c0aacee238c2f42e02a2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-24237-yhttps://doaj.org/toc/2041-1723Anti-ferromagnetic based memories have a wide range of advantages over their ferromagnetic counterparts, however, their electrical signatures of switching are complicated by spurious signals. Here, Arpaci et al demonstrate an experimental method to distinguish between anti-ferromagnetic switching, and such spurious signatures.Sevdenur ArpaciVictor Lopez-DominguezJiacheng ShiLuis Sánchez-TejerinaFrancesca GaresciChulin WangXueting YanVinod K. SangwanMatthew A. GraysonMark C. HersamGiovanni FinocchioPedram Khalili AmiriNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Sevdenur Arpaci Victor Lopez-Dominguez Jiacheng Shi Luis Sánchez-Tejerina Francesca Garesci Chulin Wang Xueting Yan Vinod K. Sangwan Matthew A. Grayson Mark C. Hersam Giovanni Finocchio Pedram Khalili Amiri Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
description	Anti-ferromagnetic based memories have a wide range of advantages over their ferromagnetic counterparts, however, their electrical signatures of switching are complicated by spurious signals. Here, Arpaci et al demonstrate an experimental method to distinguish between anti-ferromagnetic switching, and such spurious signatures.
format	article
author	Sevdenur Arpaci Victor Lopez-Dominguez Jiacheng Shi Luis Sánchez-Tejerina Francesca Garesci Chulin Wang Xueting Yan Vinod K. Sangwan Matthew A. Grayson Mark C. Hersam Giovanni Finocchio Pedram Khalili Amiri
author_facet	Sevdenur Arpaci Victor Lopez-Dominguez Jiacheng Shi Luis Sánchez-Tejerina Francesca Garesci Chulin Wang Xueting Yan Vinod K. Sangwan Matthew A. Grayson Mark C. Hersam Giovanni Finocchio Pedram Khalili Amiri
author_sort	Sevdenur Arpaci
title	Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
title_short	Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
title_full	Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
title_fullStr	Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
title_full_unstemmed	Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
title_sort	observation of current-induced switching in non-collinear antiferromagnetic irmn3 by differential voltage measurements
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/7962adb64f1b4c0aacee238c2f42e02a
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Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

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