Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

Abstract We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal...

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Autores principales: Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Adreen Azman, Al-Zuhairi Omar, Noor Azrina Talik, Azzuliani Supangat, Wan Haliza Abd Majid
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/7973d3a047ab4ebca3785ec8ad2522eb
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