Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

Abstract We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal...

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Autores principales:	Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Adreen Azman, Al-Zuhairi Omar, Noor Azrina Talik, Azzuliani Supangat, Wan Haliza Abd Majid
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/7973d3a047ab4ebca3785ec8ad2522eb
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spelling	oai:doaj.org-article:7973d3a047ab4ebca3785ec8ad2522eb2021-12-02T14:29:04ZImpact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN10.1038/s41598-021-89201-82045-2322https://doaj.org/article/7973d3a047ab4ebca3785ec8ad2522eb2021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89201-8https://doaj.org/toc/2045-2322Abstract We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal quality, optical and electrical properties was investigated. Field emission scanning electron microscopy and atomic force microscopy showed that the surface morphology was improved upon insertion of 120 pairs of AlN/GaN thin layers with a root-mean-square roughness of 2.15 nm. On-axis X-ray ω-scan rocking curves showed enhanced crystalline quality: the full width at half maximum decreased from 1224 to 756 arcsec along the [0001] direction and from 2628 to 1360 arcsec along the [1–100] direction for a-GaN grown with 120 pairs of AlN/GaN compared to a-GaN without AlN/GaN pairs. Reciprocal space mapping showed that a-plane GaN with a high number of AlN/GaN pairs exhibits near-relaxation strain states. Room-temperature photoluminescence spectra showed that the sample with the highest number of AlN/GaN pairs exhibited the lowest-intensity yellow and blue luminescence bands, indicating a reduction in defects and dislocations. The a-plane InGaN/GaN LEDs with 120 pairs of SSPM-L AlN/GaN exhibited a significant increase (~ 250%) in light output power compared to that of LEDs without SSPM-L AlN/GaN pairs.Anas KamarundzamanAhmad Shuhaimi Abu BakarAdreen AzmanAl-Zuhairi OmarNoor Azrina TalikAzzuliani SupangatWan Haliza Abd MajidNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Anas Kamarundzaman Ahmad Shuhaimi Abu Bakar Adreen Azman Al-Zuhairi Omar Noor Azrina Talik Azzuliani Supangat Wan Haliza Abd Majid Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
description	Abstract We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal quality, optical and electrical properties was investigated. Field emission scanning electron microscopy and atomic force microscopy showed that the surface morphology was improved upon insertion of 120 pairs of AlN/GaN thin layers with a root-mean-square roughness of 2.15 nm. On-axis X-ray ω-scan rocking curves showed enhanced crystalline quality: the full width at half maximum decreased from 1224 to 756 arcsec along the [0001] direction and from 2628 to 1360 arcsec along the [1–100] direction for a-GaN grown with 120 pairs of AlN/GaN compared to a-GaN without AlN/GaN pairs. Reciprocal space mapping showed that a-plane GaN with a high number of AlN/GaN pairs exhibits near-relaxation strain states. Room-temperature photoluminescence spectra showed that the sample with the highest number of AlN/GaN pairs exhibited the lowest-intensity yellow and blue luminescence bands, indicating a reduction in defects and dislocations. The a-plane InGaN/GaN LEDs with 120 pairs of SSPM-L AlN/GaN exhibited a significant increase (~ 250%) in light output power compared to that of LEDs without SSPM-L AlN/GaN pairs.
format	article
author	Anas Kamarundzaman Ahmad Shuhaimi Abu Bakar Adreen Azman Al-Zuhairi Omar Noor Azrina Talik Azzuliani Supangat Wan Haliza Abd Majid
author_facet	Anas Kamarundzaman Ahmad Shuhaimi Abu Bakar Adreen Azman Al-Zuhairi Omar Noor Azrina Talik Azzuliani Supangat Wan Haliza Abd Majid
author_sort	Anas Kamarundzaman
title	Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
title_short	Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
title_full	Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
title_fullStr	Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
title_full_unstemmed	Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
title_sort	impact of sandwiched strain periodic multilayer aln/gan on strain and crystalline quality of a-plane gan
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/7973d3a047ab4ebca3785ec8ad2522eb
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_version_	1718391260033581056

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

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