Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
Abstract We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal...
Enregistré dans:
Auteurs principaux: | Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Adreen Azman, Al-Zuhairi Omar, Noor Azrina Talik, Azzuliani Supangat, Wan Haliza Abd Majid |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/7973d3a047ab4ebca3785ec8ad2522eb |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Author Correction: Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
par: Anas Kamarundzaman, et autres
Publié: (2021) -
Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
par: Tzu-Hsuan Chang, et autres
Publié: (2017) -
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
par: Geoffrey Avit, et autres
Publié: (2021) -
Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
par: Mahdi Hajlaoui, et autres
Publié: (2021) -
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
par: Yannick Baines, et autres
Publié: (2017)