Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor

Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia conc...

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Autores principales: Yi Zhao, Deyin Zhao, Zhenzhen Ma, Gong Li, Dan Zhao, Xin Li
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
UVO
Acceso en línea:https://doaj.org/article/7b99b7c0bf754726b77e9c9acfa44839
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