Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia conc...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/7b99b7c0bf754726b77e9c9acfa44839 |
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| Sumario: | Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia concentration, as well as the selectivity and stability of the sensor were studied. The test results show that the comprehensive performance of the gas sensor is the best when the UVO processing time is 1 min and the applied gate voltage is −9 V. The proposed Ion Sensitive GO-Si based metal-semiconductor junction resistor Gas Sensor can detect 250 ppb ammonia with a sensitivity of 4%. The detection limit of the sensor is 50 ppb. Using acetone and ethanol as contrast gases, the sensor shows better selectivity for ammonia. The sensitivity retention rate of the sensor after 10 days is higher than 70%, which indicates that the sensor has a good retention performance. |
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