Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor

Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia conc...

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Autores principales:	Yi Zhao, Deyin Zhao, Zhenzhen Ma, Gong Li, Dan Zhao, Xin Li
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	gas sensor graphene oxide GO-Si based metal-semiconductor junction resistor UVO reduced graphene oxide ammonia Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/7b99b7c0bf754726b77e9c9acfa44839
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spelling	oai:doaj.org-article:7b99b7c0bf754726b77e9c9acfa448392021-11-25T17:15:52ZIon Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor10.3390/coatings111113102079-6412https://doaj.org/article/7b99b7c0bf754726b77e9c9acfa448392021-10-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1310https://doaj.org/toc/2079-6412Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia concentration, as well as the selectivity and stability of the sensor were studied. The test results show that the comprehensive performance of the gas sensor is the best when the UVO processing time is 1 min and the applied gate voltage is −9 V. The proposed Ion Sensitive GO-Si based metal-semiconductor junction resistor Gas Sensor can detect 250 ppb ammonia with a sensitivity of 4%. The detection limit of the sensor is 50 ppb. Using acetone and ethanol as contrast gases, the sensor shows better selectivity for ammonia. The sensitivity retention rate of the sensor after 10 days is higher than 70%, which indicates that the sensor has a good retention performance.Yi ZhaoDeyin ZhaoZhenzhen MaGong LiDan ZhaoXin LiMDPI AGarticlegas sensorgraphene oxideGO-Si based metal-semiconductor junction resistorUVOreduced graphene oxideammoniaEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1310, p 1310 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	gas sensor graphene oxide GO-Si based metal-semiconductor junction resistor UVO reduced graphene oxide ammonia Engineering (General). Civil engineering (General) TA1-2040
spellingShingle	gas sensor graphene oxide GO-Si based metal-semiconductor junction resistor UVO reduced graphene oxide ammonia Engineering (General). Civil engineering (General) TA1-2040 Yi Zhao Deyin Zhao Zhenzhen Ma Gong Li Dan Zhao Xin Li Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
description	Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia concentration, as well as the selectivity and stability of the sensor were studied. The test results show that the comprehensive performance of the gas sensor is the best when the UVO processing time is 1 min and the applied gate voltage is −9 V. The proposed Ion Sensitive GO-Si based metal-semiconductor junction resistor Gas Sensor can detect 250 ppb ammonia with a sensitivity of 4%. The detection limit of the sensor is 50 ppb. Using acetone and ethanol as contrast gases, the sensor shows better selectivity for ammonia. The sensitivity retention rate of the sensor after 10 days is higher than 70%, which indicates that the sensor has a good retention performance.
format	article
author	Yi Zhao Deyin Zhao Zhenzhen Ma Gong Li Dan Zhao Xin Li
author_facet	Yi Zhao Deyin Zhao Zhenzhen Ma Gong Li Dan Zhao Xin Li
author_sort	Yi Zhao
title	Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
title_short	Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
title_full	Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
title_fullStr	Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
title_full_unstemmed	Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor
title_sort	ion sensitive go-si based metal-semiconductor junction resistor gas sensor
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/7b99b7c0bf754726b77e9c9acfa44839
work_keys_str_mv	AT yizhao ionsensitivegosibasedmetalsemiconductorjunctionresistorgassensor AT deyinzhao ionsensitivegosibasedmetalsemiconductorjunctionresistorgassensor AT zhenzhenma ionsensitivegosibasedmetalsemiconductorjunctionresistorgassensor AT gongli ionsensitivegosibasedmetalsemiconductorjunctionresistorgassensor AT danzhao ionsensitivegosibasedmetalsemiconductorjunctionresistorgassensor AT xinli ionsensitivegosibasedmetalsemiconductorjunctionresistorgassensor
_version_	1718412539694415872

Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor

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