Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility trans...

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Autores principales: Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
GaN
HEMT
E-mode
wet surface treatment
power performance
millimeter-wave applications
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Acceso en línea:https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa
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https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa

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