Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility trans...

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Autores principales:	Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	GaN HEMT E-mode wet surface treatment power performance millimeter-wave applications Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa
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spelling	oai:doaj.org-article:7bcdd89a3b7442a1b03c7416e12c81fa2021-11-11T18:06:42ZAdoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications10.3390/ma142165581996-1944https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6558https://doaj.org/toc/1996-1944In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (V<sub>th</sub>) of 0.13 V and a maximum transconductance (g<sub>m</sub>) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al<sub>2</sub>O<sub>3</sub> layer with a smooth surface which also suppressed the current collapse phenomenon.Chun WangYu-Chiao ChenHeng-Tung HsuYi-Fan TsaoYueh-Chin LinChang-Fu DeeEdward-Yi ChangMDPI AGarticleGaNHEMTE-modewet surface treatmentpower performancemillimeter-wave applicationsTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6558, p 6558 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN HEMT E-mode wet surface treatment power performance millimeter-wave applications Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	GaN HEMT E-mode wet surface treatment power performance millimeter-wave applications Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Chun Wang Yu-Chiao Chen Heng-Tung Hsu Yi-Fan Tsao Yueh-Chin Lin Chang-Fu Dee Edward-Yi Chang Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
description	In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (V<sub>th</sub>) of 0.13 V and a maximum transconductance (g<sub>m</sub>) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al<sub>2</sub>O<sub>3</sub> layer with a smooth surface which also suppressed the current collapse phenomenon.
format	article
author	Chun Wang Yu-Chiao Chen Heng-Tung Hsu Yi-Fan Tsao Yueh-Chin Lin Chang-Fu Dee Edward-Yi Chang
author_facet	Chun Wang Yu-Chiao Chen Heng-Tung Hsu Yi-Fan Tsao Yueh-Chin Lin Chang-Fu Dee Edward-Yi Chang
author_sort	Chun Wang
title	Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
title_short	Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
title_full	Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
title_fullStr	Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
title_full_unstemmed	Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
title_sort	adoption of the wet surface treatment technique for the improvement of device performance of enhancement-mode algan/gan moshemts for millimeter-wave applications
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa
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Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

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