Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility trans...
Enregistré dans:
| Auteurs principaux: | , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|