Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility trans...
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Autores principales: | Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
MDPI AG
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/7bcdd89a3b7442a1b03c7416e12c81fa |
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