Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films

Abstract We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain high resolution images and quantitative measure...

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Autores principales:	M. Precner, T. Polaković, Qiao Qiao, D. J. Trainer, A. V. Putilov, C. Di Giorgio, I. Cone, Y. Zhu, X. X. Xi, M. Iavarone, G. Karapetrov
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/7d8350d8507c4192a6070e81b6b1aab6
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spelling	oai:doaj.org-article:7d8350d8507c4192a6070e81b6b1aab62021-12-02T15:09:04ZEvolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films10.1038/s41598-018-24913-y2045-2322https://doaj.org/article/7d8350d8507c4192a6070e81b6b1aab62018-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-24913-yhttps://doaj.org/toc/2045-2322Abstract We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain high resolution images and quantitative measurements of the local density of states, work function and nature of defects in MoS2 films. We track the evolution of defects that are formed under heating and electron beam irradiation. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally or e-beam activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS2. Even at equilibrium conditions, the work function and local density of states values are strongly affected near grain boundaries and edges. The results provide initial estimates of the thermal budgets available for reliable fabrication of MoS2-based integrated electronics and indicate the importance of defect control and layer passivation.M. PrecnerT. PolakovićQiao QiaoD. J. TrainerA. V. PutilovC. Di GiorgioI. ConeY. ZhuX. X. XiM. IavaroneG. KarapetrovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q M. Precner T. Polaković Qiao Qiao D. J. Trainer A. V. Putilov C. Di Giorgio I. Cone Y. Zhu X. X. Xi M. Iavarone G. Karapetrov Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films
description	Abstract We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain high resolution images and quantitative measurements of the local density of states, work function and nature of defects in MoS2 films. We track the evolution of defects that are formed under heating and electron beam irradiation. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally or e-beam activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS2. Even at equilibrium conditions, the work function and local density of states values are strongly affected near grain boundaries and edges. The results provide initial estimates of the thermal budgets available for reliable fabrication of MoS2-based integrated electronics and indicate the importance of defect control and layer passivation.
format	article
author	M. Precner T. Polaković Qiao Qiao D. J. Trainer A. V. Putilov C. Di Giorgio I. Cone Y. Zhu X. X. Xi M. Iavarone G. Karapetrov
author_facet	M. Precner T. Polaković Qiao Qiao D. J. Trainer A. V. Putilov C. Di Giorgio I. Cone Y. Zhu X. X. Xi M. Iavarone G. Karapetrov
author_sort	M. Precner
title	Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films
title_short	Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films
title_full	Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films
title_fullStr	Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films
title_full_unstemmed	Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films
title_sort	evolution of metastable defects and its effect on the electronic properties of mos2 films
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/7d8350d8507c4192a6070e81b6b1aab6
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Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films

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