Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss

The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices. In this paper, turn-off loss (Eoff) and turn-off time (toff) are taken as temperature-sensitive electrical parameters. It is prove...

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Autores principales:	Lingfeng Shao, Guoqing Xu, Weiwei Wei, Xichun Zhang, Huiyun Li, Luhai Zheng, Hui Zhao
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2022
Materias:	Insulated gate bipolar transistor (IGBT) Online junction temperature extraction Turn-off delay time Turn-off loss Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/7fe15df1ab8547d091507b5ec19b253c
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spelling	oai:doaj.org-article:7fe15df1ab8547d091507b5ec19b253c2021-12-04T04:34:55ZResearch on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss2352-484710.1016/j.egyr.2021.11.075https://doaj.org/article/7fe15df1ab8547d091507b5ec19b253c2022-04-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2352484721012208https://doaj.org/toc/2352-4847The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices. In this paper, turn-off loss (Eoff) and turn-off time (toff) are taken as temperature-sensitive electrical parameters. It is proved that the junction temperature of the insulated-gate bipolar transistor (IGBT) changes abruptly during switching. The common defects of a single temperature-sensitive electrical parameter, including collector current requirements and poor junction detection accuracy, are considered. Therefore, after proving the linear relationship between junction temperature, turn-off time, and turn-off loss, a hybrid model based on turn-off loss (Eoff) and turn-off time (toff) is proposed to accurately extract junction temperature. The experimental results show that this method has the advantages of high precision and strong anti-jamming ability.Lingfeng ShaoGuoqing XuWeiwei WeiXichun ZhangHuiyun LiLuhai ZhengHui ZhaoElsevierarticleInsulated gate bipolar transistor (IGBT)Online junction temperature extractionTurn-off delay timeTurn-off lossElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENEnergy Reports, Vol 8, Iss , Pp 163-170 (2022)
institution	DOAJ
collection	DOAJ
language	EN
topic	Insulated gate bipolar transistor (IGBT) Online junction temperature extraction Turn-off delay time Turn-off loss Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Insulated gate bipolar transistor (IGBT) Online junction temperature extraction Turn-off delay time Turn-off loss Electrical engineering. Electronics. Nuclear engineering TK1-9971 Lingfeng Shao Guoqing Xu Weiwei Wei Xichun Zhang Huiyun Li Luhai Zheng Hui Zhao Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
description	The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices. In this paper, turn-off loss (Eoff) and turn-off time (toff) are taken as temperature-sensitive electrical parameters. It is proved that the junction temperature of the insulated-gate bipolar transistor (IGBT) changes abruptly during switching. The common defects of a single temperature-sensitive electrical parameter, including collector current requirements and poor junction detection accuracy, are considered. Therefore, after proving the linear relationship between junction temperature, turn-off time, and turn-off loss, a hybrid model based on turn-off loss (Eoff) and turn-off time (toff) is proposed to accurately extract junction temperature. The experimental results show that this method has the advantages of high precision and strong anti-jamming ability.
format	article
author	Lingfeng Shao Guoqing Xu Weiwei Wei Xichun Zhang Huiyun Li Luhai Zheng Hui Zhao
author_facet	Lingfeng Shao Guoqing Xu Weiwei Wei Xichun Zhang Huiyun Li Luhai Zheng Hui Zhao
author_sort	Lingfeng Shao
title	Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
title_short	Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
title_full	Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
title_fullStr	Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
title_full_unstemmed	Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
title_sort	research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss
publisher	Elsevier
publishDate	2022
url	https://doaj.org/article/7fe15df1ab8547d091507b5ec19b253c
work_keys_str_mv	AT lingfengshao researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss AT guoqingxu researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss AT weiweiwei researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss AT xichunzhang researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss AT huiyunli researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss AT luhaizheng researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss AT huizhao researchonjunctiontemperaturedetectionmethodofpowerelectronicdevicesbasedonturnofftimeandturnoffloss
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Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss

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