Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Abstract We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at r...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg, Daniel Rhodes, Simin Feng, Shahriar Memaran, Yan Xin, Amber McCreary, Angela R. Hight Walker, Aldo Raeliarijaona, Humberto Terrones, Mauricio Terrones, Stephen McGill, Luis Balicas
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/8005da25544b453e8a65233009ce36ca
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Internet

https://doaj.org/article/8005da25544b453e8a65233009ce36ca

Ejemplares similares