Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Abstract We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at r...

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Autores principales:	Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg, Daniel Rhodes, Simin Feng, Shahriar Memaran, Yan Xin, Amber McCreary, Angela R. Hight Walker, Aldo Raeliarijaona, Humberto Terrones, Mauricio Terrones, Stephen McGill, Luis Balicas
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8005da25544b453e8a65233009ce36ca
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spelling	oai:doaj.org-article:8005da25544b453e8a65233009ce36ca2021-12-02T15:08:18ZPhase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors10.1038/s41598-018-30969-72045-2322https://doaj.org/article/8005da25544b453e8a65233009ce36ca2018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-30969-7https://doaj.org/toc/2045-2322Abstract We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90° or nearly 180°. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.Nihar R. PradhanCarlos GarciaBridget IsenbergDaniel RhodesSimin FengShahriar MemaranYan XinAmber McCrearyAngela R. Hight WalkerAldo RaeliarijaonaHumberto TerronesMauricio TerronesStephen McGillLuis BalicasNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Nihar R. Pradhan Carlos Garcia Bridget Isenberg Daniel Rhodes Simin Feng Shahriar Memaran Yan Xin Amber McCreary Angela R. Hight Walker Aldo Raeliarijaona Humberto Terrones Mauricio Terrones Stephen McGill Luis Balicas Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
description	Abstract We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90° or nearly 180°. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.
format	article
author	Nihar R. Pradhan Carlos Garcia Bridget Isenberg Daniel Rhodes Simin Feng Shahriar Memaran Yan Xin Amber McCreary Angela R. Hight Walker Aldo Raeliarijaona Humberto Terrones Mauricio Terrones Stephen McGill Luis Balicas
author_facet	Nihar R. Pradhan Carlos Garcia Bridget Isenberg Daniel Rhodes Simin Feng Shahriar Memaran Yan Xin Amber McCreary Angela R. Hight Walker Aldo Raeliarijaona Humberto Terrones Mauricio Terrones Stephen McGill Luis Balicas
author_sort	Nihar R. Pradhan
title	Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
title_short	Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
title_full	Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
title_fullStr	Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
title_full_unstemmed	Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
title_sort	phase modulators based on high mobility ambipolar rese2 field-effect transistors
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/8005da25544b453e8a65233009ce36ca
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Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

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