Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Abstract We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at r...

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Bibliographic Details
Main Authors: Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg, Daniel Rhodes, Simin Feng, Shahriar Memaran, Yan Xin, Amber McCreary, Angela R. Hight Walker, Aldo Raeliarijaona, Humberto Terrones, Mauricio Terrones, Stephen McGill, Luis Balicas
Format: article
Language:EN
Published: Nature Portfolio 2018
Subjects:
Medicine
R
Science
Q
Online Access:https://doaj.org/article/8005da25544b453e8a65233009ce36ca
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https://doaj.org/article/8005da25544b453e8a65233009ce36ca

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