Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

Abstract In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial techno...

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Autores principales:	Yejin Yang, Young-Soo Park, Jaemin Son, Kyoungah Cho, Sangsig Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/80e09c838d104eb6b50c1c1939b2590e
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spelling	oai:doaj.org-article:80e09c838d104eb6b50c1c1939b2590e2021-12-02T15:14:28ZSimulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges10.1038/s41598-021-98182-72045-2322https://doaj.org/article/80e09c838d104eb6b50c1c1939b2590e2021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-98182-7https://doaj.org/toc/2045-2322Abstract In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation.Yejin YangYoung-Soo ParkJaemin SonKyoungah ChoSangsig KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yejin Yang Young-Soo Park Jaemin Son Kyoungah Cho Sangsig Kim Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
description	Abstract In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation.
format	article
author	Yejin Yang Young-Soo Park Jaemin Son Kyoungah Cho Sangsig Kim
author_facet	Yejin Yang Young-Soo Park Jaemin Son Kyoungah Cho Sangsig Kim
author_sort	Yejin Yang
title	Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
title_short	Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
title_full	Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
title_fullStr	Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
title_full_unstemmed	Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
title_sort	simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/80e09c838d104eb6b50c1c1939b2590e
work_keys_str_mv	AT yejinyang simulationstudiesonelectricalcharacteristicsofsiliconnanowirefeedbackfieldeffecttransistorswithinterfacetrapcharges AT youngsoopark simulationstudiesonelectricalcharacteristicsofsiliconnanowirefeedbackfieldeffecttransistorswithinterfacetrapcharges AT jaeminson simulationstudiesonelectricalcharacteristicsofsiliconnanowirefeedbackfieldeffecttransistorswithinterfacetrapcharges AT kyoungahcho simulationstudiesonelectricalcharacteristicsofsiliconnanowirefeedbackfieldeffecttransistorswithinterfacetrapcharges AT sangsigkim simulationstudiesonelectricalcharacteristicsofsiliconnanowirefeedbackfieldeffecttransistorswithinterfacetrapcharges
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Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

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