Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
Abstract In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial techno...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/80e09c838d104eb6b50c1c1939b2590e |
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