Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films

Abstract The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface states. We report the tuning of the chemical potential in...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Radha Krishna Gopal, Sourabh Singh, Arpita Mandal, Jit Sarkar, Chiranjib Mitra
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
R
Q
Acceso en línea:https://doaj.org/article/812460526f2f47d094bfb0a35d5c68bc
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!