Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films
Abstract The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface states. We report the tuning of the chemical potential in...
Guardado en:
Autores principales: | Radha Krishna Gopal, Sourabh Singh, Arpita Mandal, Jit Sarkar, Chiranjib Mitra |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/812460526f2f47d094bfb0a35d5c68bc |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Bi1Te1 is a dual topological insulator
por: Markus Eschbach, et al.
Publicado: (2017) -
Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
por: Sophie Charpentier, et al.
Publicado: (2017) -
In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey
por: Ngoc Han Tu, et al.
Publicado: (2016) -
Tunable dynamical magnetoelectric effect in antiferromagnetic topological insulator MnBi2Te4 films
por: Tongshuai Zhu, et al.
Publicado: (2021) -
Author Correction: Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
por: Sophie Charpentier, et al.
Publicado: (2018)