Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

Abstract Damaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as co...

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Autores principales:	H. Amekura, M. Toulemonde, K. Narumi, R. Li, A. Chiba, Y. Hirano, K. Yamada, S. Yamamoto, N. Ishikawa, N. Okubo, Y. Saitoh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/823b375f8dfb4f7286f25bd8b1a1bf0a
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spelling	oai:doaj.org-article:823b375f8dfb4f7286f25bd8b1a1bf0a2021-12-02T11:45:53ZIon tracks in silicon formed by much lower energy deposition than the track formation threshold10.1038/s41598-020-80360-82045-2322https://doaj.org/article/823b375f8dfb4f7286f25bd8b1a1bf0a2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80360-8https://doaj.org/toc/2045-2322Abstract Damaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of S e below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.H. AmekuraM. ToulemondeK. NarumiR. LiA. ChibaY. HiranoK. YamadaS. YamamotoN. IshikawaN. OkuboY. SaitohNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q H. Amekura M. Toulemonde K. Narumi R. Li A. Chiba Y. Hirano K. Yamada S. Yamamoto N. Ishikawa N. Okubo Y. Saitoh Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
description	Abstract Damaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of S e below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.
format	article
author	H. Amekura M. Toulemonde K. Narumi R. Li A. Chiba Y. Hirano K. Yamada S. Yamamoto N. Ishikawa N. Okubo Y. Saitoh
author_facet	H. Amekura M. Toulemonde K. Narumi R. Li A. Chiba Y. Hirano K. Yamada S. Yamamoto N. Ishikawa N. Okubo Y. Saitoh
author_sort	H. Amekura
title	Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
title_short	Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
title_full	Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
title_fullStr	Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
title_full_unstemmed	Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
title_sort	ion tracks in silicon formed by much lower energy deposition than the track formation threshold
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/823b375f8dfb4f7286f25bd8b1a1bf0a
work_keys_str_mv	AT hamekura iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT mtoulemonde iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT knarumi iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT rli iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT achiba iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT yhirano iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT kyamada iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT syamamoto iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT nishikawa iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT nokubo iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold AT ysaitoh iontracksinsiliconformedbymuchlowerenergydepositionthanthetrackformationthreshold
_version_	1718395236667883520

Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

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