Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options, growing nitrides material directly on semi-proce...

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Autores principales:	Caroline E. Reilly, Nirupam Hatui, Thomas E. Mates, Pratik Koirala, Adedapo A. Oni, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	nitrides electronics integrated electronics MOCVD epitaxy Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/8247964aae1f43f49872fa3593b7263d
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spelling	oai:doaj.org-article:8247964aae1f43f49872fa3593b7263d2021-11-25T17:19:33ZProperties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine10.3390/cryst111114122073-4352https://doaj.org/article/8247964aae1f43f49872fa3593b7263d2021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1412https://doaj.org/toc/2073-4352The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options, growing nitrides material directly on semi-processed wafers would be advantageous, necessitating low temperature (LT) growth schemes. In this work, the growth of AlN and GaN was conducted via metalorganic chemical vapor deposition (MOCVD) using both NH<sub>3</sub> and DMHy as N-precursors. The relationships between growth rate versus temperature were determined within the range of 300 to 550 °C. The growth of AlN/GaN heterostructures was also investigated herein, employing flow modulation epitaxy MOCVD at 550 °C. Subsequent samples were studied via atomic force microscopy, X-ray diffraction, TEM, and Hall measurements. Two-dimensional electron gases were found in samples where the LT AlN layer was grown with NH<sub>3</sub>, with one sample showing high electron mobility and sheet charge of 540 cm<sup>2</sup>/V∙s and 3.76 × 10<sup>13</sup> cm<sup>−2</sup>, respectively. Inserting a LT GaN layer under the LT AlN layer caused the mobility and charge to marginally decrease while still maintaining sufficiently high values. This sets the groundwork towards use of LT nitrides MOCVD in future electronic devices integrating III-nitrides with other materials.Caroline E. ReillyNirupam HatuiThomas E. MatesPratik KoiralaAdedapo A. OniShuji NakamuraSteven P. DenBaarsStacia KellerMDPI AGarticlenitrideselectronicsintegrated electronicsMOCVDepitaxyCrystallographyQD901-999ENCrystals, Vol 11, Iss 1412, p 1412 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	nitrides electronics integrated electronics MOCVD epitaxy Crystallography QD901-999
spellingShingle	nitrides electronics integrated electronics MOCVD epitaxy Crystallography QD901-999 Caroline E. Reilly Nirupam Hatui Thomas E. Mates Pratik Koirala Adedapo A. Oni Shuji Nakamura Steven P. DenBaars Stacia Keller Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
description	The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options, growing nitrides material directly on semi-processed wafers would be advantageous, necessitating low temperature (LT) growth schemes. In this work, the growth of AlN and GaN was conducted via metalorganic chemical vapor deposition (MOCVD) using both NH<sub>3</sub> and DMHy as N-precursors. The relationships between growth rate versus temperature were determined within the range of 300 to 550 °C. The growth of AlN/GaN heterostructures was also investigated herein, employing flow modulation epitaxy MOCVD at 550 °C. Subsequent samples were studied via atomic force microscopy, X-ray diffraction, TEM, and Hall measurements. Two-dimensional electron gases were found in samples where the LT AlN layer was grown with NH<sub>3</sub>, with one sample showing high electron mobility and sheet charge of 540 cm<sup>2</sup>/V∙s and 3.76 × 10<sup>13</sup> cm<sup>−2</sup>, respectively. Inserting a LT GaN layer under the LT AlN layer caused the mobility and charge to marginally decrease while still maintaining sufficiently high values. This sets the groundwork towards use of LT nitrides MOCVD in future electronic devices integrating III-nitrides with other materials.
format	article
author	Caroline E. Reilly Nirupam Hatui Thomas E. Mates Pratik Koirala Adedapo A. Oni Shuji Nakamura Steven P. DenBaars Stacia Keller
author_facet	Caroline E. Reilly Nirupam Hatui Thomas E. Mates Pratik Koirala Adedapo A. Oni Shuji Nakamura Steven P. DenBaars Stacia Keller
author_sort	Caroline E. Reilly
title	Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
title_short	Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
title_full	Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
title_fullStr	Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
title_full_unstemmed	Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
title_sort	properties of aln/gan heterostructures grown at low growth temperatures with ammonia and dimethylhydrazine
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/8247964aae1f43f49872fa3593b7263d
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_version_	1718412481882226688

Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

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