Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options, growing nitrides material directly on semi-proce...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
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MDPI AG
2021
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| Accès en ligne: | https://doaj.org/article/8247964aae1f43f49872fa3593b7263d |
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