High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, p...
Guardado en:
| Autores principales: | , , , , , , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/83af3b2d8a5f49d997ebbb863961d0df |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|