High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, p...
Saved in:
| Main Authors: | , , , , , , , , , , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
AIP Publishing LLC
2021
|
| Subjects: | |
| Online Access: | https://doaj.org/article/83af3b2d8a5f49d997ebbb863961d0df |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|