Style de citation APA (7e éd.)

Wang, Y., Deng, G., Ji, J., Ma, H., Yang, S., Yu, J., . . . Zhang, Y. (2021). High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition. AIP Publishing LLC.

Style de citation Chicago (17e éd.)

Wang, Yang, et al. High-resistivity Nitrogen-polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition. AIP Publishing LLC, 2021.

Style de citation MLA (8e éd.)

Wang, Yang, et al. High-resistivity Nitrogen-polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition. AIP Publishing LLC, 2021.