High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, p...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Yang Wang, Gaoqiang Deng, Jie Ji, Haotian Ma, Shixu Yang, Jiaqi Yu, Yunfei Niu, Yusen Wang, Chao Lu, Yang Liu, Ke Tang, Wei Guo, Baolin Zhang, Yuantao Zhang
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/83af3b2d8a5f49d997ebbb863961d0df
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:83af3b2d8a5f49d997ebbb863961d0df
record_format	dspace
spelling	oai:doaj.org-article:83af3b2d8a5f49d997ebbb863961d0df2021-12-01T18:52:06ZHigh-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition2158-322610.1063/5.0063784https://doaj.org/article/83af3b2d8a5f49d997ebbb863961d0df2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0063784https://doaj.org/toc/2158-3226Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 105 Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al0.25Ga0.75N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 1013 cm−2 was realized at the interface between the Al0.25Ga0.75N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices.Yang WangGaoqiang DengJie JiHaotian MaShixu YangJiaqi YuYunfei NiuYusen WangChao LuYang LiuKe TangWei GuoBaolin ZhangYuantao ZhangAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115301-115301-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Yang Wang Gaoqiang Deng Jie Ji Haotian Ma Shixu Yang Jiaqi Yu Yunfei Niu Yusen Wang Chao Lu Yang Liu Ke Tang Wei Guo Baolin Zhang Yuantao Zhang High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
description	Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 105 Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al0.25Ga0.75N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 1013 cm−2 was realized at the interface between the Al0.25Ga0.75N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices.
format	article
author	Yang Wang Gaoqiang Deng Jie Ji Haotian Ma Shixu Yang Jiaqi Yu Yunfei Niu Yusen Wang Chao Lu Yang Liu Ke Tang Wei Guo Baolin Zhang Yuantao Zhang
author_facet	Yang Wang Gaoqiang Deng Jie Ji Haotian Ma Shixu Yang Jiaqi Yu Yunfei Niu Yusen Wang Chao Lu Yang Liu Ke Tang Wei Guo Baolin Zhang Yuantao Zhang
author_sort	Yang Wang
title	High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
title_short	High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
title_full	High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
title_fullStr	High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
title_full_unstemmed	High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
title_sort	high-resistivity nitrogen-polar gan for gan/algan high electron mobility transistors by metalorganic chemical vapor deposition
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/83af3b2d8a5f49d997ebbb863961d0df
work_keys_str_mv	AT yangwang highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT gaoqiangdeng highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT jieji highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT haotianma highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT shixuyang highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT jiaqiyu highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT yunfeiniu highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT yusenwang highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT chaolu highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT yangliu highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT ketang highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT weiguo highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT baolinzhang highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition AT yuantaozhang highresistivitynitrogenpolarganforganalganhighelectronmobilitytransistorsbymetalorganicchemicalvapordeposition
_version_	1718404702472765440

High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

Ejemplares similares