Three-terminal resistive switch based on metal/metal oxide redox reactions

Abstract A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the tra...

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Auteurs principaux: Mantao Huang, Aik Jun Tan, Maxwell Mann, Uwe Bauer, Raoul Ouedraogo, Geoffrey S. D. Beach
Format: article
Langue:EN
Publié: Nature Portfolio 2017
Sujets:
R
Q
Accès en ligne:https://doaj.org/article/85fac4ce5e8c487391a27f726f423b9f
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