Three-terminal resistive switch based on metal/metal oxide redox reactions

Abstract A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the tra...

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Autores principales:	Mantao Huang, Aik Jun Tan, Maxwell Mann, Uwe Bauer, Raoul Ouedraogo, Geoffrey S. D. Beach
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/85fac4ce5e8c487391a27f726f423b9f
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spelling	oai:doaj.org-article:85fac4ce5e8c487391a27f726f423b9f2021-12-02T15:05:24ZThree-terminal resistive switch based on metal/metal oxide redox reactions10.1038/s41598-017-06954-x2045-2322https://doaj.org/article/85fac4ce5e8c487391a27f726f423b9f2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06954-xhttps://doaj.org/toc/2045-2322Abstract A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 103 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current.Mantao HuangAik Jun TanMaxwell MannUwe BauerRaoul OuedraogoGeoffrey S. D. BeachNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mantao Huang Aik Jun Tan Maxwell Mann Uwe Bauer Raoul Ouedraogo Geoffrey S. D. Beach Three-terminal resistive switch based on metal/metal oxide redox reactions
description	Abstract A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 103 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current.
format	article
author	Mantao Huang Aik Jun Tan Maxwell Mann Uwe Bauer Raoul Ouedraogo Geoffrey S. D. Beach
author_facet	Mantao Huang Aik Jun Tan Maxwell Mann Uwe Bauer Raoul Ouedraogo Geoffrey S. D. Beach
author_sort	Mantao Huang
title	Three-terminal resistive switch based on metal/metal oxide redox reactions
title_short	Three-terminal resistive switch based on metal/metal oxide redox reactions
title_full	Three-terminal resistive switch based on metal/metal oxide redox reactions
title_fullStr	Three-terminal resistive switch based on metal/metal oxide redox reactions
title_full_unstemmed	Three-terminal resistive switch based on metal/metal oxide redox reactions
title_sort	three-terminal resistive switch based on metal/metal oxide redox reactions
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/85fac4ce5e8c487391a27f726f423b9f
work_keys_str_mv	AT mantaohuang threeterminalresistiveswitchbasedonmetalmetaloxideredoxreactions AT aikjuntan threeterminalresistiveswitchbasedonmetalmetaloxideredoxreactions AT maxwellmann threeterminalresistiveswitchbasedonmetalmetaloxideredoxreactions AT uwebauer threeterminalresistiveswitchbasedonmetalmetaloxideredoxreactions AT raoulouedraogo threeterminalresistiveswitchbasedonmetalmetaloxideredoxreactions AT geoffreysdbeach threeterminalresistiveswitchbasedonmetalmetaloxideredoxreactions
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Three-terminal resistive switch based on metal/metal oxide redox reactions

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