Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/8726d5081cfd4c3a82889565ee6a79be |
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