Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.

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Autores principales: Changjiang Liu, Sahil J. Patel, Timothy A. Peterson, Chad C. Geppert, Kevin D. Christie, Gordon Stecklein, Chris J. Palmstrøm, Paul A. Crowell
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/8726d5081cfd4c3a82889565ee6a79be
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spelling oai:doaj.org-article:8726d5081cfd4c3a82889565ee6a79be2021-12-02T17:33:07ZDynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance10.1038/ncomms102962041-1723https://doaj.org/article/8726d5081cfd4c3a82889565ee6a79be2016-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms10296https://doaj.org/toc/2041-1723In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.Changjiang LiuSahil J. PatelTimothy A. PetersonChad C. GeppertKevin D. ChristieGordon SteckleinChris J. PalmstrømPaul A. CrowellNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Changjiang Liu
Sahil J. Patel
Timothy A. Peterson
Chad C. Geppert
Kevin D. Christie
Gordon Stecklein
Chris J. Palmstrøm
Paul A. Crowell
Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
description In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.
format article
author Changjiang Liu
Sahil J. Patel
Timothy A. Peterson
Chad C. Geppert
Kevin D. Christie
Gordon Stecklein
Chris J. Palmstrøm
Paul A. Crowell
author_facet Changjiang Liu
Sahil J. Patel
Timothy A. Peterson
Chad C. Geppert
Kevin D. Christie
Gordon Stecklein
Chris J. Palmstrøm
Paul A. Crowell
author_sort Changjiang Liu
title Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
title_short Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
title_full Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
title_fullStr Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
title_full_unstemmed Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
title_sort dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
publisher Nature Portfolio
publishDate 2016
url https://doaj.org/article/8726d5081cfd4c3a82889565ee6a79be
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AT chadcgeppert dynamicdetectionofelectronspinaccumulationinferromagnetsemiconductordevicesbyferromagneticresonance
AT kevindchristie dynamicdetectionofelectronspinaccumulationinferromagnetsemiconductordevicesbyferromagneticresonance
AT gordonstecklein dynamicdetectionofelectronspinaccumulationinferromagnetsemiconductordevicesbyferromagneticresonance
AT chrisjpalmstrøm dynamicdetectionofelectronspinaccumulationinferromagnetsemiconductordevicesbyferromagneticresonance
AT paulacrowell dynamicdetectionofelectronspinaccumulationinferromagnetsemiconductordevicesbyferromagneticresonance
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