Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics with...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/87c3378f4c7b4710a082cda83ed8d0cb |
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| Sumario: | Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics within a 90 nm pitch metallization layer via selective vapor-based conversion of metal oxide films. |
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