Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics with...

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Autores principales:	Mikhail Krishtab, Ivo Stassen, Timothée Stassin, Alexander John Cruz, Oguzhan Orkut Okudur, Silvia Armini, Chris Wilson, Stefan De Gendt, Rob Ameloot
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/87c3378f4c7b4710a082cda83ed8d0cb
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spelling	oai:doaj.org-article:87c3378f4c7b4710a082cda83ed8d0cb2021-12-02T14:39:21ZVapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics10.1038/s41467-019-11703-x2041-1723https://doaj.org/article/87c3378f4c7b4710a082cda83ed8d0cb2019-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-11703-xhttps://doaj.org/toc/2041-1723Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics within a 90 nm pitch metallization layer via selective vapor-based conversion of metal oxide films.Mikhail KrishtabIvo StassenTimothée StassinAlexander John CruzOguzhan Orkut OkudurSilvia ArminiChris WilsonStefan De GendtRob AmelootNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Mikhail Krishtab Ivo Stassen Timothée Stassin Alexander John Cruz Oguzhan Orkut Okudur Silvia Armini Chris Wilson Stefan De Gendt Rob Ameloot Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
description	Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics within a 90 nm pitch metallization layer via selective vapor-based conversion of metal oxide films.
format	article
author	Mikhail Krishtab Ivo Stassen Timothée Stassin Alexander John Cruz Oguzhan Orkut Okudur Silvia Armini Chris Wilson Stefan De Gendt Rob Ameloot
author_facet	Mikhail Krishtab Ivo Stassen Timothée Stassin Alexander John Cruz Oguzhan Orkut Okudur Silvia Armini Chris Wilson Stefan De Gendt Rob Ameloot
author_sort	Mikhail Krishtab
title	Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_short	Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_full	Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_fullStr	Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_full_unstemmed	Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_sort	vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/87c3378f4c7b4710a082cda83ed8d0cb
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Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

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