Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range o...

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Autores principales: Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Dejie Diao, Chen Cheng, Changfu Li, Jiancai Leng
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
InGaN/GaN multiple quantum well
low-temperature p-GaN layer
photoluminescence
electroluminescence
localization effect
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/882077be7b524a95a011fa668b83aa8f
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https://doaj.org/article/882077be7b524a95a011fa668b83aa8f

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