Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range o...

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Autores principales:	Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Dejie Diao, Chen Cheng, Changfu Li, Jiancai Leng
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	InGaN/GaN multiple quantum well low-temperature p-GaN layer photoluminescence electroluminescence localization effect Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/882077be7b524a95a011fa668b83aa8f
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id	oai:doaj.org-article:882077be7b524a95a011fa668b83aa8f
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spelling	oai:doaj.org-article:882077be7b524a95a011fa668b83aa8f2021-11-25T18:32:43ZOptical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer10.3390/nano111131342079-4991https://doaj.org/article/882077be7b524a95a011fa668b83aa8f2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3134https://doaj.org/toc/2079-4991GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range of 6–300 K and injection current range of 0.01–350 mA. Based on the results, we suggest that a 20 nm-thick LT p-GaN layer can effectively prevent indium (In) re-evaporation, improve the quantum-confined Stark effect in the last quantum well (QW) of the active region, and finally reduce the efficiency droop by about 7%.Jianfei LiDuo ChenKuilong LiQiang WangMengyao ShiDejie DiaoChen ChengChangfu LiJiancai LengMDPI AGarticleInGaN/GaN multiple quantum welllow-temperature p-GaN layerphotoluminescenceelectroluminescencelocalization effectChemistryQD1-999ENNanomaterials, Vol 11, Iss 3134, p 3134 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	InGaN/GaN multiple quantum well low-temperature p-GaN layer photoluminescence electroluminescence localization effect Chemistry QD1-999
spellingShingle	InGaN/GaN multiple quantum well low-temperature p-GaN layer photoluminescence electroluminescence localization effect Chemistry QD1-999 Jianfei Li Duo Chen Kuilong Li Qiang Wang Mengyao Shi Dejie Diao Chen Cheng Changfu Li Jiancai Leng Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
description	GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range of 6–300 K and injection current range of 0.01–350 mA. Based on the results, we suggest that a 20 nm-thick LT p-GaN layer can effectively prevent indium (In) re-evaporation, improve the quantum-confined Stark effect in the last quantum well (QW) of the active region, and finally reduce the efficiency droop by about 7%.
format	article
author	Jianfei Li Duo Chen Kuilong Li Qiang Wang Mengyao Shi Dejie Diao Chen Cheng Changfu Li Jiancai Leng
author_facet	Jianfei Li Duo Chen Kuilong Li Qiang Wang Mengyao Shi Dejie Diao Chen Cheng Changfu Li Jiancai Leng
author_sort	Jianfei Li
title	Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_short	Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_full	Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_fullStr	Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_full_unstemmed	Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_sort	optical properties of gan-based green light-emitting diodes influenced by low-temperature p-gan layer
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/882077be7b524a95a011fa668b83aa8f
work_keys_str_mv	AT jianfeili opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT duochen opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT kuilongli opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT qiangwang opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT mengyaoshi opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT dejiediao opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT chencheng opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT changfuli opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer AT jiancaileng opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
_version_	1718411029295136768

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

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