Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

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Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range o...

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Detalles Bibliográficos
Autores principales:	Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Dejie Diao, Chen Cheng, Changfu Li, Jiancai Leng
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	InGaN/GaN multiple quantum well low-temperature p-GaN layer photoluminescence electroluminescence localization effect Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/882077be7b524a95a011fa668b83aa8f
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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